In a world first, Toshiba has announced the development of a 16-die stacked NAND flash memory utilizing Through Silicon Via (TSV) technology.
With New Energy and Industrial Technology Development Organization, who assisted in developing some of the new tech, Toshiba’s TSV technology achieves an I/O data rate of over 1Gbps, a rate higher than any other NAND flash memories.
The new technology has a low voltage supply: 1.8V to the core circuits and 1.2V to the I/O circuits, creating the ideal solution for low latency, high bandwidth and high IOPS/Watt in flash storage applications, including high-end enterprise SSD.
The packets now use approximately 50% power reduction of write operations, read operations, and I/O data transfers.
TSV technology utilizes the vertical electrodes and vias to pass through the silicon dies for the connection. Which enables high-speed data input and output, reducing power consumption.
The new NAND flash memory provides the ideal solution for low latency, high bandwidth
The prototype will be shown at Flash Memory Summit 2015, to be held from August 11 to 13 in Santa Clara, USA.